Standard

IEEE 1005-1998

Feb 1999 Withdrawn

Note: This standard has a new edition: IEEE 1005-1991

Corrigendums and amendments are bought separately.

Language English

Services Read online + Print/Download €215.00 Read online €143.00

There are no extended editions available for this standard

There are no available corrigendum or amendments for this standard. Any future corrigendum and amendments will be added automatically for subscribers.

Abstract

Revision Standard - Inactive-Withdrawn. This standard describes the underlying physics and the operation of floating gate memory arrays, specifically, UV erasable EPROM, byte rewritable E 2 PROMs, and block rewritableflash EEPROMs. In addition, reliability hazards are covered with focus on retention, endurance,and disturb. There are also clauses on the issues of testing floating gate arrays and their hardness to ionizing radiation.

Document information

Standard from IEEE
Published: 9 February 1999
Withdrawn: 16 January 2004
Document type: IS
Pages
ISBN: 978-0-7381-3952-4

Publisher IEEE
Distributor IEEE
ICS 31.080.30
Technical Committee IEEE Electron Devices Society /

Product Relations

Revises: IEEE 1005-1991

IEEE 1005-1998

Create subscription

Benefits of a subscription:

IEEE 1005-1998

IEEE 1005-1991

Abstract

Document information

Product Relations

Create subscription

Benefits of a subscription:

Extended editions Extended editions (0)

Version history Related corrigendum and amendments (0)

Version history History (2)

IEEE 1005-1998

IEEE 1005-1991

Abstract

Document information

Product Relations